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Surface plasmon mediated hot-carrier generation is utilized widely for the manipulation of electron–photon interactions in many types of optoelectronic devices including solar cells, photodiodes, and optical modulators. A diversity of plasmonic systems such as nanoparticles, resonators, and waveguides has been introduced to enhance hot-carrier generation; however, the impact of propagating surface plasmons on hot-carrier lifetime has not been clearly demonstrated. Here, we systematically study the hot-carrier relaxation in thin film gold (Au) samples under surface plasmon coupling with the Kretschmann configuration. We observe that the locally confined electric field at the surface of the metal significantly affects the hot-carrier distribution and electron temperature, which results in a slowing of the hot electrons’ relaxation time, regardless of the average value of the absorbed power in the Au thin film. This result could be extended to other plasmonic nanostructures, enabling the control of hot-carrier lifetimes throughout the optical frequency range.

The conversion of a photon’s frequency has long been a key application area of nonlinear optics. It has been discussed how a slow temporal variation of a material’s refractive index can lead to the adiabatic frequency shift (AFS) of a pulse spectrum. Such a rigid spectral change has relevant technological implications, for example, in ultrafast signal processing. Here, we investigate the AFS process in epsilon-near-zero (ENZ) materials and show that the frequency shift can be achieved in a shorter length if operating in the vicinity of$\mathrm{R}\mathrm{e}\{{\mathrm{\epsilon <\#comment/>}}_r\}=0$. We also predict that, if the refractive index is induced by an intense optical pulse, the frequency shift is more efficient for a pump at the ENZ wavelength. Remarkably, we show that these effects are a consequence of the slow propagation speed of pulses at the ENZ wavelength. Our theoretical predictions are validated by experiments obtained for the AFS of optical pulses incident upon aluminum zinc oxide thin films at ENZ. Our results indicate that transparent metal oxides operating near the ENZ point are good candidates for future frequency conversion schemes.